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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : Page No. : 1/5
BTA1514M3
Description
• The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. • Large IC , IC( Max) = -0.6A • High BVCEO, BVCEO= -150V • Complementary to BTC3906M3. • Pb-free package
Symbol
BTA1514M3
Outline
SOT-89
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Power Dissipation
Symbol VCBO VCEO VEBO IC
Pd
Limits -160 -150 -5 -0.6
0.6 1 2
(Note 1) (Note 2)
Unit V V V A
W W W
Junction Temperature Tj Storage Temperature Tstg Note : 1.