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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2006.08.04 Page No. : 1/5
BTA1514N3
Description
• The BTA1514N3 is designed for general purpose application requiring high breakdown voltage. • Large IC , IC( Max) = -0.6A • High BVCEO, BVCEO= -150V • Complementary to BTC3906N3. • Pb-free package
Symbol
BTA1514N3
Outline
SOT-23
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -160 -150 -5 -0.