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BTA1759M3 - PNP Transistor

Description

High breakdown voltage.

Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.

Wide SOA (safe operation area).

Complementary to BTC4505M3.

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Datasheet Details

Part number BTA1759M3
Manufacturer Cystech Electonics Corp
File Size 268.29 KB
Description PNP Transistor
Datasheet download datasheet BTA1759M3 Datasheet
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CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 BTA1759M3 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA. • Wide SOA (safe operation area). • Complementary to BTC4505M3. Symbol BTA1759M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC Pd Limits -400 -400 -6 -300 0.6 1 (Note 1) 2 (Note 2) 208 125 (Note 1) 62.
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