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BTA1759N3 - PNP Transistor

Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.

Wide SOA (safe operation area).

Complementary to BTC4505N3.

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Datasheet Details

Part number BTA1759N3
Manufacturer Cystech Electonics Corp
File Size 251.97 KB
Description PNP Transistor
Datasheet download datasheet BTA1759N3 Datasheet
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CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 BTA1759N3 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. • Wide SOA (safe operation area). • Complementary to BTC4505N3.
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