BTC4102S3
BTC4102S3 is NPN Transistor manufactured by Cystech Electonics Corp.
Description
The BTC4102S3 is designed for high voltage amplification application.
Features
- High breakdown voltage. (BVCEO=120V)
- plementary to BTA1579S3
Symbol
Outline
SOT-323
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 120 120 5 50 200 150 -55~+150 Unit V V V m A m W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat)
- h FE f T Cob Min. 120 120 5 56 Typ. 140 2.5 Max. 0.5 0.5 0.5 390 Unit V V V µA µA V MHz p F
Spec. No. : C208S3 .. Issued Date : 2003.06.11 Revised Date : Page No. : 2/4
Test Conditions IC=50µA IC=1m A IC=50µA VCB=100V VEB=4V IC=10m A, IB=1m A VCE=6V, IC=2m A VCE=12V, IC=2m A, f=100MHz VCB=12V, IE=0A, f=1MHz
- Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of h FE
Rank Range K 56~120 P 82~180 Q 120~270 R 180~390
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000
Current Gain---HFE
HFE@VCE=6V
Spec. No. : C208S3 .. Issued Date : 2003.06.11 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000 Saturation Voltage---(m V)
VCE(SAT)@IC=10IB
100 0.1 1 10 100
Collector Current--- IC(m A)
10 0.1 1 10 100
Collector Current ---IC(m A)
Saturation Voltage vs Collector Current
1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(m V) 1
Cutoff Frequency vs Collector...