• Part: BTC4102S3
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Cystech Electonics Corp
  • Size: 181.00 KB
Download BTC4102S3 Datasheet PDF
Cystech Electonics Corp
BTC4102S3
BTC4102S3 is NPN Transistor manufactured by Cystech Electonics Corp.
Description The BTC4102S3 is designed for high voltage amplification application. Features - High breakdown voltage. (BVCEO=120V) - plementary to BTA1579S3 Symbol Outline SOT-323 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 120 120 5 50 200 150 -55~+150 Unit V V V m A m W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - h FE f T Cob Min. 120 120 5 56 Typ. 140 2.5 Max. 0.5 0.5 0.5 390 Unit V V V µA µA V MHz p F Spec. No. : C208S3 .. Issued Date : 2003.06.11 Revised Date : Page No. : 2/4 Test Conditions IC=50µA IC=1m A IC=50µA VCB=100V VEB=4V IC=10m A, IB=1m A VCE=6V, IC=2m A VCE=12V, IC=2m A, f=100MHz VCB=12V, IE=0A, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE Rank Range K 56~120 P 82~180 Q 120~270 R 180~390 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Current Gain---HFE HFE@VCE=6V Spec. No. : C208S3 .. Issued Date : 2003.06.11 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(m V) VCE(SAT)@IC=10IB 100 0.1 1 10 100 Collector Current--- IC(m A) 10 0.1 1 10 100 Collector Current ---IC(m A) Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(m V) 1 Cutoff Frequency vs Collector...