High BVCEO
High current capability
Complementary to BTB1236AL3
Pb-free lead plating package
Symbol
BTD1857AL3
B：Base C：Collector E：Emitter
Outline
SOT-223 C
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage
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CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AL3
Spec. No. : C855L3 Issued Date : 2005.06.17 Revised Date : 2010.12.31 Page No. : 1/7
Description
• High BVCEO • High current capability • Complementary to BTB1236AL3 • Pb-free lead plating package
Symbol
BTD1857AL3
B：Base C：Collector E：Emitter
Outline
SOT-223 C
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PD Tj Tstg
Limits
180 160
5 1.5 3 5 150 -55~+150
Unit
V V V A A W °C °C
BTD1857AL3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C855L3 Issued Date : 2005.06.
BTD1857AL3 Datasheet
