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BTN1053L3 - NPN Epitaxial Planar Transistor

Key Features

  • 5W power dissipation.
  • Excellent HFE Characteristics up to 1A.
  • Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA).
  • 5A peak pulse current Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Note : Single pulse, Pw≤300µs, Duty Cycle≤2%. Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg.

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Datasheet Details

Part number BTN1053L3
Manufacturer Cystech Electonics
File Size 186.53 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN1053L3 Datasheet

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CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C818L3 Issued Date : 2003.08.13 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTN1053L3 Features • 5W power dissipation • Excellent HFE Characteristics up to 1A • Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). • 5A peak pulse current Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Note : Single pulse, Pw≤300µs, Duty Cycle≤2%. Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 150 75 5 1.5 5 (Note) 5 150 -55~+150 Unit V V V A W °C °C BTN1053L3 CYStek Product Specification CYStech Electronics Corp. www.DataSheet4U.