BTN1053M3 Description
CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTN1053M3 BVCEO IC Spec. 2003.04.04 Revised Date :2017.10.16 Page No.
BTN1053M3 Key Features
- 2W power dissipation
- Excellent HFE Characteristics up to 1A
- Low Saturation Voltage, VCE(sat)=0.15V(typ)@IC=1A, IB=50mA
- 5A peak pulse current
- Pb-free lead plating and halogen-free package