Cystech Electonics D44H11FP
Low Vcesat NPN Epitaxial Planar Transistor
FEATURES
● Low VCE(sat)● High BVCEO
● Excellent current gain characteristics
● Pb-free lead plating package Symbol D44H11FP Outline TO-220FP B:Base C:Collector E:Emitter BCE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. D44H11FP Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 80 80 6 10 20 (Note 1) 2 50 62.5 2.5 150 -55~+150 Unit V V V A W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C606FP Issued Date : 2005.03.29 Revised Date : 2011.12.06 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. 80 60 40 - Typ. 0.3 1.0 50 130 Max. 10 50 0.6 1.5 - Unit V μ...