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D44H11FP - Low Vcesat NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat).
  • High BVCEO.
  • Excellent current gain characteristics.
  • Pb-free lead plating package Symbol D44H11FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Ju.

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Datasheet Details

Part number D44H11FP
Manufacturer Cystech Electonics
File Size 267.10 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet D44H11FP Datasheet

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Part Number Description
D44H11E3 Low Vcesat NPN Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor D44H11FP Spec. No. : C606FP Issued Date : 2005.03.29 Revised Date : 2011.12.06 Page No. : 1/6 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free lead plating package Symbol D44H11FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs,Duty≦2%.