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D44H11TU - NPN Epitaxial Silicon Transistor

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D44H11TU — NPN Epitaxial Silicon Transistor D44H11TU NPN Epitaxial Silicon Transistor • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H March 2009 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCEO VEBO IC ICP PC TJ TSTG Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector-Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 80 5 10 20 50 1.67 150 - 55 ~ 150 Units V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ.