D44H11TU
- NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
- Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A
- Fast Switching Speeds
- plement to KSE45H
March 2009
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO VEBO IC ICP PC
TJ TSTG
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector-Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature
Value
80 5 10 20 50 1.67 150
- 55 ~ 150
Units
V V A A W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ.
BVCEO Collector-Emitter Breakdown Voltage IC = 10m A, IB = 0
BVEBO Emitter-Base Breakdown Voltage
IE = 500μA, IC= 0
ICES
Collector Cut-off Current
VCE = Rated VCEO, VEB = 0
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0 h FE
DC Current Gain
VCE = 1V,...
