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CYStech Electronics Corp.
Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTA06N03J3
BVDSS ID RDS(ON)
25V 80A 6mΩ
Features
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package
Symbol
MTA06N03J3
Outline
TO-252
G：Gate D：Drain S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy@ L=0.
MTA06N03J3 Datasheet
