Datasheet4U Logo Datasheet4U.com

MTA17A02CDN6 - Dual N-Channel Enhancement Mode MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Small package outline.
  • Pb-free lead plating and halogen-free package RDSON (TYP. ) VGS=4.5V VGS=4.5V, ID=6A VGS=4.0V, ID=6A VGS=3.0V, ID=6A VGS=2.5V, ID=6A 20V 6A 16.1mΩ 16.7mΩ 18.4 mΩ 20.2 mΩ Equivalent Circuit MTA17A02CDN6 G：Gate S：Source D：Drain Ordering Information Device MTA17A02CDN6-0-T1-G Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly.

📥 Download Datasheet

Datasheet Details

Part number MTA17A02CDN6
Manufacturer Cystech Electonics
File Size 357.84 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA17A02CDN6 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTA106D Switch Fujisoku
MTA106D KNITTER-SWITCH ETC
MTA106D Wire Lug Termination AUGAT
MTA106D-PC KNITTER-SWITCH ETC
MTA106E Switch Fujisoku

Other Datasheets by Cystech Electonics

Part Number Description
MTA010N01SN3 14V N-Channel Enhancement Mode MOSFET
MTA012A02CDV8 Common Drain Dual N-Channel Enhancement Mode MOSFET
MTA020A01Q8 Dual N-Channel Enhancement Mode Power MOSFET
MTA020N01S3 14V N-Channel Enhancement Mode MOSFET
MTA020N01SN3 14V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Dual N-Channel Enhancement Mode MOSFET Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 1/8 MTA17A02CDN6 BVDSS ID Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package RDSON (TYP.) VGS=4.5V VGS=4.5V, ID=6A VGS=4.0V, ID=6A VGS=3.0V, ID=6A VGS=2.5V, ID=6A 20V 6A 16.1mΩ 16.7mΩ 18.4 mΩ 20.
Published: |