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CYStech Electronics Corp.
Spec. No. : C103H8 Issued Date : 2016.04.20 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB020N06KH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=8A
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating and Halogen-free package
RDS(ON)@VGS=4.5V, ID=6A RDS(ON)@VGS=4V, ID=4A
60V 42A
7.8A 12.2mΩ(typ) 15.6mΩ(typ) 17.
MTB020N06KH8 Datasheet
