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MTB020N06KH8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • ESD protected gate.
  • Pb-free lead plating and Halogen-free package RDS(ON)@VGS=4.5V, ID=6A RDS(ON)@VGS=4V, ID=4A 60V 42A 7.8A 12.2mΩ(typ) 15.6mΩ(typ) 17.6mΩ(typ) Symbol MTB020N06KH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB020N06KH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Ship.

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Datasheet Details

Part number MTB020N06KH8
Manufacturer Cystech Electonics
File Size 473.87 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N06KH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C103H8 Issued Date : 2016.04.20 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB020N06KH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating and Halogen-free package RDS(ON)@VGS=4.5V, ID=6A RDS(ON)@VGS=4V, ID=4A 60V 42A 7.8A 12.2mΩ(typ) 15.6mΩ(typ) 17.