MTB020N06KH8 Datasheet | Cystech Electonics

CYStech Electronics Corp. Spec. No. : C103H8 Issued Date : 2016.04.20 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB020N06KH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8A Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - ESD protected gate - Pb-free lead plating and Halogen-free package RDS(ON)@VGS=4.5V, ID=6A RDS(ON)@VGS=4V, ID=4A 60V 42A 7.8A 12.2mΩ(typ) 15.6mΩ(typ) 17.6mΩ(typ) Symbol Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB020N06KH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping...