Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C103E3 Issued Date : 2017.02.14 Revised Date : 2017.04.05 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB020N06KE3 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- ESD protected gate
- RoHS pliant package
60V 41A
8.4A 12.7 mΩ(typ) 17.8 mΩ(typ)
Symbol
Outline
TO-220
G：Gate D：Drain S：Source
Ordering Information
Device MTB020N6KE3-0-UB-X
Package
TO-220FP (RoHS pliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for...