MTB020N06KE3 Description
CYStech Electronics Corp. 2017.02.14 Revised Date : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB020N06KE3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
MTB020N06KE3 Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- ESD protected gate
- RoHS pliant package