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MTB020N06KE3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • ESD protected gate.
  • RoHS compliant package 60V 41A 8.4A 12.7 mΩ(typ) 17.8 mΩ(typ) Symbol MTB020N06KE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB020N6KE3-0-UB-X Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment.

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Datasheet Details

Part number MTB020N06KE3
Manufacturer CYStech
File Size 396.59 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N06KE3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C103E3 Issued Date : 2017.02.14 Revised Date : 2017.04.05 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB020N06KE3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • RoHS compliant package 60V 41A 8.4A 12.7 mΩ(typ) 17.