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MTB09N06FP - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package RDSON(TYP) @ VGS=4.5V, ID=20A 60V 60A 11A 6.4mΩ 7.8mΩ Symbol MTB09N06FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTB09N06FP-0-UB-S Package TO-220FP (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant prod.

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Datasheet Details

Part number MTB09N06FP
Manufacturer Cystech Electonics
File Size 357.99 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB09N06FP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2016.02.19 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB09N06FP BVDSS ID @ VGS=10V, TC=25°C ID @ VGS=10V, TA=25°C RDSON(TYP) @ VGS=10V, ID=30A Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package RDSON(TYP) @ VGS=4.5V, ID=20A 60V 60A 11A 6.4mΩ 7.