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MTB17A03Q8 - Dual N-Channel Logic Level Enhancement Mode MOSFET

Datasheet Summary

Description

The MTB17A03Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness.

Features

  • RDS(ON)=15mΩ(max. )@VGS=10V, ID=10A.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual N-ch MOSFET package.
  • Pb-free lead plating & halogen-free package Equivalent Circuit MTB17A03Q8 Outline SOP-8 G：Gate S：Source D：Drain MTB17A03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C729Q8 Issued Date : 2009.07.01 Revised Date : 2019.03.26 Page No. : 2/ 9 Ordering Information Device MTB17A03Q8-0-T3.

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Datasheet Details

Part number MTB17A03Q8
Manufacturer Cystech Electonics
File Size 642.58 KB
Description Dual N-Channel Logic Level Enhancement Mode MOSFET
Datasheet download datasheet MTB17A03Q8 Datasheet
Additional preview pages of the MTB17A03Q8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C729Q8 Issued Date : 2009.07.01 Revised Date : 2019.03.26 Page No. : 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET MTB17A03Q8 BVDSS ID @ VGS=10V, TA=25 C RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=6A 30V 10A 8.6mΩ 12.6mΩ Description The MTB17A03Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=15mΩ(max.
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