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MTB17A03V8 - Dual N-Channel Logic Level Enhancement Mode MOSFET

Datasheet Summary

Description

The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB17A03V8 Outline DFN3×3 G：Gate D：Drain S：Source Pin 1 Ordering Information Device MTB17A03V8-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTB17A03V8 CYStek Product Specification CYStech E.

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Datasheet Details

Part number MTB17A03V8
Manufacturer Cystech Electonics
File Size 304.02 KB
Description Dual N-Channel Logic Level Enhancement Mode MOSFET
Datasheet download datasheet MTB17A03V8 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C396V8 Issued Date : 2013.08.09 Revised Date : 2013.08.14 Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode MOSFET MTB17A03V8 BVDSS ID RDSON(TYP) VGS=10V, ID=6A VGS=4.5V, ID=4A 30V 7A 16mΩ 25mΩ Description The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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