MTB3D0N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=24A 30V 60A 19.2A 2.5 mΩ(typ) 3.5 mΩ(typ) Symbol MTB3D0N03BH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB3D0N03BH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Envi.

MTB3D0N03BH8 n-channel logic level enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTB3D0N03BH8
Manufacturer	Cystech Electonics
File Size	678.19 KB
Description	N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet	MTB3D0N03BH8 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Spec. No. : C999H8 Issued Date : 2015.03.10 Revised Date : 2020.02.25 Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET MTB3D0N03BH8 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=24A 30V 60A 19.2A 2.5 mΩ(typ) 3.