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MTB3D0N03BQ8 - N-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=15A 30V 19A 27A 3.1mΩ(typ) 4.0mΩ(typ) Symbol MTB3D0N03BQ8 Outline Pin 1 SOP-8 G:Gate D:Drain S:Source Ordering Information Device MTB3D0N03BQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free pack.

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Datasheet Details

Part number MTB3D0N03BQ8
Manufacturer Cystech Electonics
File Size 431.90 KB
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB3D0N03BQ8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C999Q8 Issued Date : 2015.10.20 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB3D0N03BQ8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=15A 30V 19A 27A 3.1mΩ(typ) 4.