Full PDF Text Transcription for MTB9D0N10RQ8 (Reference)
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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB9D0N10RQ8 Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 1/9 Features • Single...
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sued Date : 2016.11.04 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 12A 9.6A 5.6 mΩ(typ) 7.