• Part: MTBH0N25L3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 392.82 KB
Download MTBH0N25L3 Datasheet PDF
MTBH0N25L3 page 2
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C895L3 Issued Date : 2016.11.26 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET Features - Low Gate Charge - Simple Drive Requirement - Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ.) 732mΩ (typ.) Equivalent Circuit G:Gate D:Drain S:Source Outline SOT-223 Ordering Information Device MTBH0N25L3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound products Packing...