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CYStech Electronics Corp.
N & P-Channel Enhancement Mode Power MOSFET
Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 1/11
MTC3504BJ4
Features
• Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package
N-CH BVDSS ID RDSON(MAX) 40V 12A 35mΩ
P-CH -40V -9A 44mΩ
Equivalent Circuit
MTC3504BJ4
Outline
TO-252-4L
G：Gate D：Drain S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits N-channel P-channel Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Operating Junction and Storage Temperature Range Note : *1.
MTC3504BJ4 Datasheet
