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MTD07N04E3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A 40V 58A 13.4A 5.1 mΩ(typ) 6.6 mΩ(typ) Symbol MTD07N04E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTD07N04E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS complian.

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Datasheet preview – MTD07N04E3

Datasheet Details

Part number MTD07N04E3
Manufacturer Cystech Electonics
File Size 373.86 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD07N04E3 Datasheet
Additional preview pages of the MTD07N04E3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTD07N04E3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A 40V 58A 13.4A 5.1 mΩ(typ) 6.
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