Datasheet4U Logo Datasheet4U.com

MTD07N04E3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A 40V 58A 13.4A 5.1 mΩ(typ) 6.6 mΩ(typ) Symbol MTD07N04E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTD07N04E3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS complian.

📥 Download Datasheet

Datasheet Details

Part number MTD07N04E3
Manufacturer Cystech Electonics
File Size 373.86 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD07N04E3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTD-0208N Tunnel Diode Detectors Aeroflex
MTD-0218N Tunnel Diode Detectors Aeroflex
MTD-0818N Tunnel Diode Detectors Aeroflex
MTD-1002N Tunnel Diode Detectors Aeroflex
MTD-160 PHASE CONTROL THYRISTOR ELECTROVIPRYAMITEL

Other Datasheets by Cystech Electonics

Part Number Description
MTD07N04FP N-Channel Enhancement Mode Power MOSFET
MTD07N04H8 N-Channel Enhancement Mode Power MOSFET
MTD07N04I3 N-Channel Enhancement Mode Power MOSFET
MTD07N04J3 N-Channel Enhancement Mode Power MOSFET
MTD07N04Q8 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C140E3 Issued Date : 2015.12.09 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTD07N04E3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A 40V 58A 13.4A 5.1 mΩ(typ) 6.