MTD07N04H8 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET)

MTD07N04H8 - N-Channel Enhancement Mode Power MOSFET

Features

Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=11A.
Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=9A.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package 40V 67A 42.4A 14A 11.2A 4.7mΩ(typ) 8.0mΩ(typ) Symbol MTD07N04H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD07N04H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000.

Datasheet Details

Part number	MTD07N04H8
Manufacturer	Cystech Electonics
File Size	405.08 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTD07N04H8 Datasheet
Additional preview pages of the MTD07N04H8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2015.04.08 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTD07N04H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=11A • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=9A • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 40V 67A 42.4A 14A 11.2A 4.7mΩ(typ) 8.

Published: Sep 4, 2016 |