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MTE015N15RE3 - N-Channel Enhancement Mode Power MOSFET

Features

  • RDS(ON)@VGS=10V, ID=30A.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package 150V 90A 16mΩ (typ) Symbol MTE015N15RE3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device Package Shipping MTE015N15RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S.

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Datasheet Details

Part number MTE015N15RE3
Manufacturer Cystech Electonics
File Size 317.72 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE015N15RE3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.13 Revised Date : 2016.06.23 Page No.
Published: |