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MTE015N15RFP - N-Channel Enhancement Mode Power MOSFET

Features

  • BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=30A.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package 150V 50A 16 mΩ(typ) Symbol MTE015N15RFP Outline TO-220FP G:Gate D:Drain S:Source GDS Ordering Information Device Package Shipping MTE015N15RFP-0-UB-X TO-220FP (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 box.

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Datasheet Details

Part number MTE015N15RFP
Manufacturer Cystech Electonics
File Size 496.00 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE015N15RFP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE015N15RFP Spec. No. : C838FP Issued Date : 2016.11.21 Revised Date : 2017.01.04 Page No.
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