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MTE040P03N3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Compact and low profile SOT-23 package.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Pb-free lead plating package Symbol MTE040P03N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTE040P03N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gre.

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Datasheet Details

Part number MTE040P03N3
Manufacturer Cystech Electonics
File Size 402.83 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE040P03N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C058N3 Issued Date : 2016.09.13 Revised Date : Page No. : 1/9 -30V P-Channel Enhancement Mode MOSFET MTE040P03N3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-4.
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