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MTE040P03Q8 - P-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON@VGS=-10V, ID=-5.3A -30V -6.6A -5.3A 36.3mΩ(typ) Equivalent Circuit MTE040P03Q8 Outline D D SOP-8 D D G：Gate S：Source D：Drain Pin 1 G S S S Ordering Information Device MTE040P03Q8-0-T3-G Package Shipping SOP-8 (Pb-free lead plating and halogen-free package) 2500 pcs/ Tape & Reel En.

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Datasheet Details

Part number MTE040P03Q8
Manufacturer Cystech Electonics
File Size 588.23 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE040P03Q8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET MTE040P03Q8 Spec. No. : C058Q8 Issued Date : 2016.11.03 Revised Date : Page No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON@VGS=-10V, ID=-5.3A -30V -6.6A -5.3A 36.
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