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MTE05N08E3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTE05N08E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device MTE05N08E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton MTE05N08E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C918E3 Issued Date : 2013.06.10 Revise.

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Datasheet Details

Part number MTE05N08E3
Manufacturer Cystech Electonics
File Size 230.77 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE05N08E3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C918E3 Issued Date : 2013.06.10 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE05N08E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 80V 180A 4.3mΩ 4.5mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol MTE05N08E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device MTE05N08E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton MTE05N08E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C918E3 Issued Date : 2013.06.10 Revised Date : Page No.
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