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MTE05N08F7T - N-Channel Enhancement Mode Power MOSFET

Features

  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 80V 172A 2.7mΩ Symbol MTE05N08F7T Outline TO-263-7L-4C G：Gate D：Drain S：Source Ordering Information Device MTE05N08F7T-0-T7-X Package Shipping TO-263-7L-4C (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green comp.

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Datasheet preview – MTE05N08F7T

Datasheet Details

Part number MTE05N08F7T
Manufacturer Cystech Electonics
File Size 479.59 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE05N08F7T Datasheet
Additional preview pages of the MTE05N08F7T datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE05N08F7T Spec. No. : C918F7T Issued Date : 2017.01.03 Revised Date : Page No. : 1/9 Features • Simple Drive Requirement • Fast Switching Characteristic • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A 80V 172A 2.
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