Datasheet Details
| Part number | MTEA0N10J3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 264.25 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTEA0N10J3 Datasheet
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Features
- Low Gate Charge.
- Simple Drive Requirement.
- Pb-free lead plating package RDSON(TYP) VGS=10V, ID=12A VGS=6V, ID=10A 100V 16A 83mΩ 100mΩ Equivalent Circuit MTEA0N10J3 Outline TO-252AB TO-252AA G：Gate D：Drain S：Source GDS G DS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C (Note 1) Continuous Drain Current @ VGS=10V, TC=100°C (Note 1) Continuous Drain.