Datasheet4U Logo Datasheet4U.com

MTEA0N10Q8 - N-Channel Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package Symbol MTEA0N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTEA0N10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,.

📥 Download Datasheet

Datasheet Details

Part number MTEA0N10Q8
Manufacturer Cystech Electonics
File Size 318.08 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEA0N10Q8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTE030N15RH8 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTE100N10KRH8 N-Channel Enhancement Mode Power MOSFET CYStech
MTE1011P Metal Can Infrarred Emitter Marktech Corporate
MTE1040 INFRARED LED Marktech Corporate
MTE1050A INFRARED LED Marktech Corporate

Other Datasheets by Cystech Electonics

Part Number Description
MTEA0N10J3 N-Channel Enhancement Mode Power MOSFET
MTEA2N15L3 N-Channel Enhancement Mode Power MOSFET
MTEA2N15Q8 N-Channel Enhancement Mode Power MOSFET
MTEA5N10J3 N-Channel Enhancement Mode Power MOSFET
MTEA6C15J4 N & P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA0N10Q8 BVDSS ID RDSON@VGS=10V, ID=4A RDSON@VGS=5.5V, ID=3A 100V 5.
Published: |