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MTEA2N15L3 - N-Channel Enhancement Mode Power MOSFET

Description

The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Single Drive Requirement.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package Symbol MTEA2N15L3 Outline SOT-223 D G:Gate D:Drain S:Source S D G Ordering Information Device MTEA2N15L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packi.

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Datasheet Details

Part number MTEA2N15L3
Manufacturer Cystech Electonics
File Size 257.39 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEA2N15L3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C880L3 Issued Date : 2012.10.03 Revised Date : 2013.10.25 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA2N15L3 BVDSS ID RDSON@VGS=10V, ID=1.6A RDSON@VGS=5.5V, ID=1A Description 150V 3A 125mΩ(typ) 141mΩ(typ) The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.
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