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MTEA2N15L3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C880L3 Issued Date : 2012.10.03 Revised Date : 2013.10.25 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA2N15L3 BVDSS ID RDSON@VGS=10V, ID=1.6A RDSON@VGS=5.

Datasheet Details

Part number MTEA2N15L3
Manufacturer Cystech Electonics
File Size 257.39 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTEA2N15L3-CystechElectonics.pdf

General Description

150V 3A 125mΩ(typ) 141mΩ(typ) The MTEA2N15L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOT-223 package is universally preferred for all mercial-industrial surface mount applications.

Key Features

  • Single Drive Requirement.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package Symbol MTEA2N15L3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTEA2N15L3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packi.

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