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MTEA2N15Q8 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA2N15Q8 BVDSS ID RDSON@VGS=10V, ID=3.9A RDSON@VGS=5.5V, ID=3.

Datasheet Details

Part number MTEA2N15Q8
Manufacturer Cystech Electonics
File Size 291.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTEA2N15Q8-CystechElectonics.pdf

General Description

The MTEA2N15Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOP-8 package is universally preferred for all mercial-industrial surface mount applications.

Key Features

  • Single Drive Requirement.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating package Symbol MTEA2N15Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTEA2N15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C880Q8 Issued Date : 2012.10.01 Revised Date : 2013.03.01 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=.

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