MTED6N25FP Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Insulating package, front/back side insulating voltage=2500V(AC)
- RoHS pliant package
- Part: MTED6N25FP
- Manufacturer: Cystech Electonics
- Size: 422.08 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| MTED6N25H8 | N-Channel Enhancement Mode Power MOSFET |
| MTED6N25J3 | N-Channel Enhancement Mode Power MOSFET |
| MTE010N10E3 | N-Channel Enhancement Mode Power MOSFET |
| MTE010N10F3 | N-Channel Enhancement Mode Power MOSFET |
| MTE010N10FP | N-Channel Enhancement Mode Power MOSFET |
MTED6N25FP Description
CYStech Electronics Corp. 2015.09.10 Revised Date.