Datasheet4U.com

MTED6N25FP - N-Channel Enhancement Mode Power MOSFET

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Insulating package, front/back side insulating voltage=2500V(AC).
RoHS compliant package Symbol MTED6N25FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTED6N25FP-0-UB-X Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products.

Cystech Electonics

📥 Download Datasheet

MTED6N25FP n-channel enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTED6N25FP
Manufacturer	Cystech Electonics
File Size	422.08 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTED6N25FP Datasheet

📁 Similar Datasheet

MTEDCAE002SAJ-1M2 - Embedded USB Mass Storage Drive (Micron)
MTEDCAE004SAJ-1N2 - Embedded USB Mass Storage Drive (Micron)
MTEDCAE008SAJ-1N2 - Embedded USB Mass Storage Drive (Micron)
MTEDCAE016SAJ-1N2 - Embedded USB Mass Storage Drive (Micron)
MTEDCAR002SAJ-1M2 - Embedded USB Mass Storage Drive (Micron)
MTEDCAR004SAJ-1N2 - Embedded USB Mass Storage Drive (Micron)
MTEDCAR008SAJ-1N2 - Embedded USB Mass Storage Drive (Micron)
MTEDCAR016SAJ-1N2 - Embedded USB Mass Storage Drive (Micron)
MTEDCBE002SAJ-1M2 - Embedded USB Mass Storage Drive (Micron)
MTEDCBE004SAJ-1N2 - Embedded USB Mass Storage Drive (Micron)

Other Datasheets by Cystech Electonics

MTED6N25H8 - N-Channel Enhancement Mode Power MOSFET
MTED6N25J3 - N-Channel Enhancement Mode Power MOSFET
MTE010N10E3 - N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 - N-Channel Enhancement Mode Power MOSFET
MTE010N10FP - N-Channel Enhancement Mode Power MOSFET
MTE011N10RE3 - N-Channel Enhancement Mode Power MOSFET
MTE011N10RFP - N-Channel Enhancement Mode Power MOSFET
MTE011N10RH8 - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

CYStech Electronics Corp. Spec. No. : C894FP Issued Date : 2015.09.10 Revised Date : Page No.

Published: Aug 30, 2016 |