MTED6N25H8 - N-Channel Enhancement Mode Power MOSFET

Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free lead plating and Halogen-free package Symbol MTED6N25H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTED6N25H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant.

Cystech Electonics

Datasheet Details

Part number	MTED6N25H8
Manufacturer	Cystech Electonics
File Size	537.12 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTED6N25H8 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C894H8 Issued Date : 2016.07.26 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTED6N25H8 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=5A 250V 4.6A 1.

Published: Aug 30, 2016 |