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MTED6N25H8 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C894H8 Issued Date : 2016.07.26 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTED6N25H8 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=5A 250V 4.6A 1.

Datasheet Details

Part number MTED6N25H8
Manufacturer Cystech Electonics
File Size 537.12 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTED6N25H8-CystechElectonics.pdf

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package Symbol MTED6N25H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTED6N25H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant.

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