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MTN2510J3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package RDSON(TYP) VGS=10V, ID=30A VGS=6V, ID=20A 100V 50A 19mΩ 23mΩ Symbol MTN2510J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTN2510J3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly gr.

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Datasheet Details

Part number MTN2510J3
Manufacturer Cystech Electonics
File Size 258.38 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN2510J3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C741J3 Issued Date : 2009.09.21 Revised Date :2013.12.26 Page No.
Published: |