• Part: MTN2510J3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 258.38 KB
Download MTN2510J3 Datasheet PDF
Cystech Electonics
MTN2510J3
Features - Low Gate Charge - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Characteristic - Pb-free lead plating and halogen-free package RDSON(TYP) VGS=10V, ID=30A VGS=6V, ID=20A 100V 50A 19mΩ 23mΩ Symbol Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTN2510J3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C741J3 Issued Date : 2009.09.21 Revised Date :2013.12.26 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain Current @ TC=25°C,...