Datasheet Details
| Part number | MTN2510J3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 258.38 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTN2510J3 Datasheet
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Key Features
- Low Gate Charge.
- Simple Drive Requirement.
- Repetitive Avalanche Rated.
- Fast Switching Characteristic.
- Pb-free lead plating and halogen-free package RDSON(TYP) VGS=10V, ID=30A VGS=6V, ID=20A 100V 50A 19mΩ 23mΩ Symbol MTN2510J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTN2510J3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly gr.