MTN2510LH8 Description
CYStech Electronics Corp. 2015.10.15 Revised Date : 1/10 N-Channel Enhancement Mode Power MOSFET MTN2510LH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
MTN2510LH8 Key Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Repetitive Avalanche Rated
- Pb-free lead plating and Halogen-free package