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MTN2510LH8 - N-Channel Enhancement Mode MOSFET

Key Features

  • RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=20A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package 100V 45A 8.6A 19.3mΩ 20.5mΩ Symbol MTN2510LH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTN2510LH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment f.

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Datasheet Details

Part number MTN2510LH8
Manufacturer Cystech Electonics
File Size 438.67 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2510LH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2015.10.15 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN2510LH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=20A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package 100V 45A 8.6A 19.3mΩ 20.