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MTN3400N3 - 30V N-CHANNEL Enhancement Mode MOSFET

Key Features

  • VDS=30V RDS(ON)=33mΩ@VGS=4.5V, ID=5A www. DataSheet4U. com RDS(ON)=52mΩ@VGS=2.5V, ID=4A.
  • Low on-resistance.
  • Low gate charge.
  • Excellent thermal and electrical capabilities.
  • Compact and low profile SOT-23 package Equivalent Circuit MTN3400N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C.

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Datasheet Details

Part number MTN3400N3
Manufacturer Cystech Electonics
File Size 744.93 KB
Description 30V N-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTN3400N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 30V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C414N3 Issued Date : 2007.07.05 Revised Date : 2007.12.18 Page No. : 1/ 7 MTN3400N3 Features • VDS=30V RDS(ON)=33mΩ@VGS=4.5V, ID=5A www.DataSheet4U.com RDS(ON)=52mΩ@VGS=2.