1N60P
1N60P is SMALL SIGNAL SCHOTTKY DIODES manufactured by DC COMPONENTS.
FEATURES
- Metal silicon junction, majority carrier conduction.
- High current capability, low forward voltage drop.
- Extremely low reverse current IR
- Ultra speed switching characteristics
- Small temperature coefficient of forward characteristics
- Satisfactory Wave detection efficiency
- For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier
MECHANICAL DATA
- Case: DO-35 glass case
- Polarity: color band denotes cathode end
- Weight: 0.13 grams approx.
DO-35
1.0(25.4) MIN.
.020 (0.5)
TYP.
.165(4.2) MAX.
.079 (2.0)
MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25o C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
1.0(25.4) MIN.
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
PARAMETERS
SYMBOL
Repetitive Peak Reverse Voltage Forward Continuous Current Peak Forward Surge Current(t=1S)
TA = 2 5o C
VRRM IF IFSM
Storage and junction Temperature Range Maximum Lead Temperature for Soldering during 10S at 4mm from Case
TSTG/ TJ TL
VALUE 40 50 400
-55 to +125 230
UNITS Volts m A m A o C o C
ELECTRICAL CHARACTERISTICS
PARAMETERS
TEST CONDITIONS
SYMBOL
Forward Voltage Reverse Current
IF =1m A IF =200m A VR= 1 5 V
Junction...
