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1N60P Datasheet 600v 1.2a N-channel Power MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD 1N60P 1.2A, 600V N-CHANNEL POWER.

General Description

The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic.

This power MOSFET is usually used at high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

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Key Features

  • S.
  • RDS(ON) =11.5Ω@VGS = 10V.
  • Ultra Low gate charge (typical 5.0nC).
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

1N60P Distributor