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1N60P - 600V 1.2A N-CHANNEL POWER MOSFET

General Description

The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic.

Key Features

  • S.
  • RDS(ON) =11.5Ω@VGS = 10V.
  • Ultra Low gate charge (typical 5.0nC).
  • Low reverse transfer capacitance (CRSS = typical 3.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Other Datasheets by Unisonic Technologies

Part Number Description
1N60 1.2A 600V N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD 1N60P 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. „ FEATURES * RDS(ON) =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.