1N60P Datasheet | Unisonic Technologies

DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. - FEATURES - RDS(ON) =11.5Ω@VGS = 10V. - Ultra Low gate charge (typical 5.0n C) - Low reverse transfer capacitance (CRSS = typical 3.0 p F) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 1N60PL-T92-B 1N60PG-T92-B TO-92 1N60PL-T92-K 1N60PG-T92-K TO-92 1N60PL-T92-R 1N60PG-T92-R TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS...