1N60P Overview
The UTC 1N60P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. This power MOSFET is usually used at high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
1N60P Key Features
- RDS(ON) =11.5Ω@VGS = 10V
- Ultra Low gate charge (typical 5.0nC)
- Low reverse transfer capacitance (CRSS = typical 3.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
