Datasheet4U Logo Datasheet4U.com

DP8205 - Dual N-Channel Enhancement Power MOSFET

Datasheet Summary

Description

DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

📥 Download Datasheet

Datasheet preview – DP8205

Datasheet Details

Part number DP8205
Manufacturer DEVELOPER MICROELECTRONICS
File Size 4.11 MB
Description Dual N-Channel Enhancement Power MOSFET
Datasheet download datasheet DP8205 Datasheet
Additional preview pages of the DP8205 datasheet.

📁 Similar Datasheet

  • DP8212 - 8-Bit Input/Output Port (National)
  • DP8216 - 4-Bit Bidirectional Bus Transceivers (National)
  • DP8224 - Clock Generator and Driver (National)
  • DP8226 - 4-Bit Bidirectional Bus Transceivers (National)
  • DP8228 - System Controller and Bus Driver (National)
  • DP80390 - Pipelined High Performance 8-bit Microcontroller (Digital Core Design)
  • DP80390CPU - Pipelined High Performance 8-bit Microcontroller (Digital Core Design)
  • DP80390XP - Pipelined High Performance 8-bit Microcontroller (Digital Core Design)
  • DP8051 - Pipelined High Performance 8-bit Microcontroller (Digital Core Design)
  • DP8051CPU - Pipelined High Performance 8-bit Microcontroller (Digital Core Design)
Other Datasheets by DEVELOPER MICROELECTRONICS
  • DP8205B - Dual N-Channel Enhancement Power MOSFET
  • DP8205C - N-Channel MOSFET
  • DP8N60 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
DP8205 www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.1 DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 20 V 5.0A < 29mΩ < 34mΩ SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ±12 5 20 2.5 1.
Published: |