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DP8205B - Dual N-Channel Enhancement Power MOSFET

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Part number DP8205B
Manufacturer DEVELOPER MICROELECTRONICS
File Size 908.96 KB
Description Dual N-Channel Enhancement Power MOSFET
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Description

Dual N-Channel Enhancement Power MOSFET Product Summary Rev1.0 DP8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a Battery protection or in other Switching application.VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 20 V 6.5A < 22mΩ < 27mΩ SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Vo

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