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DP8205B - Dual N-Channel Enhancement Power MOSFET

Datasheet Summary

Description

DP8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

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Datasheet Details

Part number DP8205B
Manufacturer DEVELOPER MICROELECTRONICS
File Size 908.96 KB
Description Dual N-Channel Enhancement Power MOSFET
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DP8205B www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev1.0 DP8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 20 V 6.5A < 22mΩ < 27mΩ SOT23-6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ±12 6.5 25 6.5 1.
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