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DG630 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

DG630 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG630
Manufacturer DGME
File Size 741.47 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG630 Datasheet
Additional preview pages of the DG630 datasheet.

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DG630 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG630N，， ，，，。 ，，。 DG630 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 200 9.0 0.
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