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DG640 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

DG640 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG640
Manufacturer DGME
File Size 744.49 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG640 Datasheet
Additional preview pages of the DG640 datasheet.

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DG640 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG640N，， ，，，。 ，，。 DG640 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 200 18 0.
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