DG730 - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

DG730 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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DG730 n-channel enhancement mode mosfet by DGME - Datasheet Preview

Datasheet Details

Part number	DG730
Manufacturer	DGME
File Size	725.52 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DG730 Datasheet

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DG730 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG730N，，，，，。，，。 DG730 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 400 5.5 1.