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DG730 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

DG730 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG730
Manufacturer DGME
File Size 725.52 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG730 Datasheet
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DG730 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG730N，， ，，，。 ，，。 DG730 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 400 5.5 1.
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