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DMN2024LCA4 - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Battery managements Load switches Battery protections

Key Features

  • Common Drain Configuration with: RSS(ON) = 20mΩ to Minimize On-State Losses Qg = 28.5nC for Ultra-Fast Switching VGS(TH) = 0.9V typ. for a Low Turn-On Potential.
  • CSP with Footprint 1.35mm × 1.35mm.
  • Height = 0.22mm for Low Profile.
  • ESD Protection of Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription (Reference)

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DMN2024LCA4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (typ. @ VGS = 4.5V, TA = +25°C ) BVSSS 20V RSS(ON) 20mΩ Qg 28.5nC Qgd 0.6nC IS 8.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications  Battery managements  Load switches  Battery protections Features  Common Drain Configuration with: RSS(ON) = 20mΩ to Minimize On-State Losses Qg = 28.5nC for Ultra-Fast Switching VGS(TH) = 0.9V typ. for a Low Turn-On Potential  CSP with Footprint 1.35mm × 1.35mm  Height = 0.22mm for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.