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Product Summary
BVDSS 20V
RDS(ON) Max
38mΩ @ VGS = 4.5V 45mΩ @ VGS = 2.5V
ID Max TA = +25°C
4.8A 4.5A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
General purpose interfacing switches Power management functions
SOT23
DMN2055UQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.