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DMN2310UT - N-CHANNEL MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Load Switch Power Management Functions

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMN2310UT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2310UT. For precise diagrams, and layout, please refer to the original PDF.

DMN2310UT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 240mΩ @ VGS = 4.5V 300mΩ @ VGS = 2.5V ID TA = +25°C 1.2A 1.04A Description and Applications ...

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mΩ @ VGS = 2.5V ID TA = +25°C 1.2A 1.04A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Load Switch  Power Management Functions Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive a

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