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DMN2310UTQ - N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DC-DC Converters Load Switch Power Management Functions SOT523 DMN2

Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen- and Antimony-Free. “Green” Device (Note 3).
  • For automotive.

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Product Summary BVDSS 20V RDS(on) 240mΩ @ VGS = 4.5V 300mΩ @ VGS = 2.5V ID TA = +25°C 1.2A 1.04A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  DC-DC Converters  Load Switch  Power Management Functions SOT523 DMN2310UTQ N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen- and Antimony-Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.
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